TIPL760 datasheet(1/2 Pages) ISC

부품명	TIPL760

상세설명	isc Silicon NPN Darlington Power Transistor

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제조업체	ISC [Inchange Semiconductor Company Limited]

홈페이지	http://www.iscsemi.cn

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isc Silicon NPN Darlington Power Transistor

TIPL760

FEATURES

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO = 400V(Min.)

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

DESCRIPTION

·

Rugged Triple-duffused planar construction

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

850

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

10

V

IC

Collector Current-Continuous

4

A

ICM

Peak collector current

8

A

PC

Collector Power Dissipation

@TC=25℃

75

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

유사한 부품 번호 - TIPL760

제조업체	부품명	데이터시트	상세설명
Power Innovations Ltd	TIPL760	161Kb / 7P	NPN SILICON POWER TRANSISTORS
Power Innovations Ltd	TIPL760A	161Kb / 7P	NPN SILICON POWER TRANSISTORS
Bourns Electronic Solut...	TIPL760A	187Kb / 5P	NPN SILICON POWER TRANSISTORS
Power Innovations Ltd	TIPL760B	161Kb / 7P	NPN SILICON POWER TRANSISTORS
Bourns Electronic Solut...	TIPL760B	140Kb / 5P	NPN SILICON POWER TRANSISTORS

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유사한 설명 - TIPL760

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Inchange Semiconductor ...	2SD560	141Kb / 3P	isc Silicon NPN Darlington Power Transistor
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	2SD1126	249Kb / 2P	isc Silicon NPN Darlington Power Transistor
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TIPL760 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

TIPL760 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited

유사한 부품 번호 - TIPL760

유사한 설명 - TIPL760

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