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IXDN430CI 데이터시트(PDF) 4 Page - IXYS Corporation

부품명 IXDN430CI
상세설명  30 Amp Low-Side Ultrafast MOSFET / IGBT Driver
PDF  12 Pages
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제조업체  IXYS [IXYS Corporation]
홈페이지  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXDN430CI 데이터시트(HTML) 4 Page - IXYS Corporation

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IXDN430 / IXDI430 / IXDD430 / IXDS430
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
VIH
High input voltage
4.5V
≤ VCC ≤ 18V
3.2
V
VIL
Low input voltage
4.5V
≤ VCC ≤ 18V
1.1
V
VIN
Input voltage range
-5
VCC + 0.3
V
ROH
Output resistance
@ Output high
VCC = 18V
0.46
Ω
ROL
Output resistance
@ Output Low
VCC = 18V
0.4
Ω
tR
Rise time
CL=5600pF Vcc=18V
20
ns
tF
Fall time
CL=5600pF Vcc=18V
18
ns
tONDLY
On-time propagation
delay
CL=5600pF Vcc=18V
58
ns
tOFFDLY
Off-time propagation
delay
CL=5600pF Vcc=18V
51
ns
VCC
Power supply voltage
8.5
18
35
V
Electrical Characteristics
Unless otherwise noted, temperature over -55 oC to +125 oC, 4.5
≤ V
CC ≤ 35V .
All voltage measurements with respect to GND. IXDD430 configured as described in Test Conditions.
NOTE: Mounting tabs, solder tabs, or heat sink metalization on all packages are connected to ground.
5-lead TO-220 Outline (IXD_430CI)
28-pin SOIC Outline (IXD_430SI)
5-lead TO-263 Outline (IXD_430YI)



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