STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,

STP3NK80Z

Electrical characteristics

DocID9565 Rev 7

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Table 8: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

2.5

A

ISDM(1)

Source-drain current

(pulsed)

-

10

A

VSD(2)

Forward on voltage

ISD = 2.5 A, VGS = 0 V

-

1.6

V

trr

Reverse recovery time

ISD = 2.5 A, di/dt = 100 A/µs

VDD = 50 V

(see Figure 18: "Test circuit

for inductive load switching

and diode recovery times")

-

384

ns

Qrr

Reverse recovery charge

-

1.6

μC

IRRM

Reverse recovery current

-

8.4

A

trr

Reverse recovery time

ISD = 2.5 A, di/dt = 100 A/µs,

VDD = 50 V , TJ = 150 °C

(see Figure 18: "Test circuit

for inductive load switching

and diode recovery times")

-

474

ns

Qrr

Reverse recovery charge

-

2.1

μC

IRRM

Reverse recovery current

-

8.8

A

Notes:

(1)Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

(2)Pulse width is limited by safe operating area.

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown

voltage

IGS = ±1 mA (open drain)

30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection, thus eliminating the need for additional external componentry.