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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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100N03 데이터시트(PDF) 4 Page - STMicroelectronics |
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100N03 데이터시트(HTML) 4 Page - STMicroelectronics |
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4 / 14 page  2 Electrical characteristics STD100N03L - STD100N03L-1 4/14 Table 7. Source-Drain Diode (1) Current limited by package. (2) Pulse width limited by safe operating area (3) ISD≤ 80A, di/dt ≤ 360 A/µs, VDS≤ V(BR)DSS, Tj ≤ TjMAX (4) Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDMNote 2 Source-Drain Current Source-Drain Current (pulsed) 80 320 A A VSD Note 4 Forward On Voltage ISD = 40 A, VGS = 0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80 A, di/dt = 100 A/µs VDD = 25 V, Tj = 150 °C (see Figure 16) 40 40 2 ns nC A |
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