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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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TP5700AM 데이터시트(PDF) 2 Page - National Semiconductor (TI) |
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TP5700AM 데이터시트(HTML) 2 Page - National Semiconductor (TI) |
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2 / 8 page  Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Va with Respect to Vb 20V Voltage at Any Other Pin Va a 03V to Vb b 03V Operating Temperature TA b 25 Cto a70 C Power Dissipation (Note 3) 1W Storage Temperature TS b 65 Cto a150 C Junction Temperature 150 C Lead Temperature (Soldering 10 seconds) 300 C DC Electrical Characteristics Unless otherwise specified all tests based on the test circuits shown in Figure 1 all limits printed in bold characters are guaranteed at TA e 0 Cto a60 C by correlation with 100% testing at TA e 25 C All other limits are assured by by correlation with other production tests andor product design and characterization Symbol Parameter Conditions Min Typ Max Units ILOOP e 5 mA 28 V VT-R Tip-Ring Voltage including e 20 mA 45 V nominal 14V polarity guard e 50 mA 7 V (See Figure 1 ) e 80 mA 105 V e 120 mA 15 V VI Minimum Instantaneous Va to Vb 10 V Voltage Swing ILOOP e 5mA TRANSMIT AMPLIFIER RXIN Input Resistance From Pin 7 to Vb 15 30 50 kX GXA Gain at 1 kHz RAGC e 0X to Vb ILOOP e 20 mA TA e 25 C only 33 35 37 dB GXT Gain Variation v TA g 1dB GXI Gain Variation v ILOOP ILOOP e 20 to 100 mA b 6dB NX Transmit Noise MIC IN1 e 0V 12 18 dBrnC SDX SignalTotal Harmonic ILOOP t 20 mA Distortion VL e 800 mVrms 2 10 % GXM Gain Change when MUTED MUTE IN t VMON b 55 dB DTMF AMPLIFIER RDIN Input Resistance From Pin 8 to Vb 10 20 55 kX GXD Gain at 1 kHz RAGC e 0X to Vb ILOOP e 20 mA TA e 25 C only 35 55 75 dB SDXD SignalTotal ILOOP e 20 mA 3 10 % Harmonic Distortion VL e 106 Vrms TA e 25 C only GXDT Gain Variation v TA g 1dB GXDI Gain Variation v ILOOP ILOOP e 20 to 100 mA b 6dB MUTE INPUT IMIN Input Current Pin 9 e 15V 40 m A VMOFF MUTE OFF Input Voltage 05 V VMON MUTE ON Input Voltage 15 V 2 |
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