| 전자부품 데이터시트 검색엔진 |
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STGF7NC60HD 데이터시트(PDF) 5 Page - STMicroelectronics |
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STGF7NC60HD 데이터시트(HTML) 5 Page - STMicroelectronics |
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5 / 22 page ![]() STGB7NC60HD, STGF7NC60HD, STGP7NC60HD Electrical characteristics Doc ID 10042 Rev 10 5/22 Table 7. Switching off Symbol Parameter Test conditions Min. Typ. Max. Unit tr(Voff) Off voltage rise time VCC = 390 V, IC = 7 A, RG = 10 Ω , VGE = 15 V - 27 - ns td(off) Turn-off delay time 72 ns tf Current fall time 60 ns tr(Voff) Off voltage rise time VCC = 390 V, IC = 7 A, RG = 10 Ω , VGE = 15 V Tj = 125 °C 56 ns td(off) Turn-off delay time 116 ns tf Current fall time 105 ns Table 8. Switching energy Symbol Parameter Test conditions Min. Typ. Max Unit Eon (1) Eoff (2) Ets 1. Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25°C and 125°C). 2. Turn-off losses include also the tail of the collector current. Turn-on switching losses Turn-off switching loss Total switching loss VCC = 390 V, IC = 7 A RG = 10 Ω, VGE = 15 V, - 95 115 210 125 150 275 µJ µJ µJ Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching loss Total switching loss VCC = 390 V, IC = 7 A RG = 10 Ω, VGE = 15 V, Tj = 125°C 140 215 355 µJ µJ µJ Table 9. Collector-emitter diode Symbol Parameter Test conditions Min. Typ. Max. Unit Vf Forward on-voltage If = 3.5 A If = 3.5 A, Tj = 125 °C - 1.3 1.1 1.9 V V trr ta Qrr Irrm S Reverse recovery time Reverse recovery charge Reverse recovery current Softness factor of the diode If = 7 A, VR = 40 V, di/dt = 100 A/µs 37 22 40 2.1 0.68 ns ns nC A trr ta Qrr Irrm S Reverse recovery time Reverse recovery charge Reverse recovery current Softness factor of the diode If = 7 A, VR = 40 V, Tj = 125 °C, di/dt = 100 A/µs 61 34 98 3.2 0.79 ns ns nC A |
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