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STGD4M65DF2 데이터시트(PDF) 9 Page - STMicroelectronics |
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STGD4M65DF2 데이터시트(HTML) 9 Page - STMicroelectronics |
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9 / 20 page ![]() Figure 25. Reverse recovery energy vs. diode current slope IGBT170320161124RRE 62 54 46 38 30 0 150 300 450 600 750 E rr (μJ) di/dt (A/µs) V CC = 400 V, V GE = 15 V, I F = 4 A, T j = 175 °C Figure 26. Thermal impedance for IGBT 10 10 10 10 10 tp(s) -5 -4 -3 -2 -1 10 -2 10 -1 K 0.2 0.05 0.02 0.01 0.1 Zth=k Rthj-c δ=tp/t tp t Single pulse δ=0.5 ZthTO2T_B Figure 27. Thermal impedance for diode STGD4M65DF2 STGD4M65DF2 electrical characteristics (curves) DS11397 - Rev 5 page 9/20 |
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