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L3G4IS 데이터시트(PDF) 11 Page - STMicroelectronics

부품명 L3G4IS
상세설명  MEMS motion sensor: three-axis digital output gyroscope for gaming and OIS
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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L3G4IS 데이터시트(HTML) 11 Page - STMicroelectronics

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L3G4IS
User interface mode specifications
Doc ID 022612 Rev 1
11/24
4.3
Temperature sensor characteristics
@ AVdd = 2.8 V, T = 25 °C unless otherwise noted(c).
4.4
Absolute maximum ratings
Stresses above those listed as “absolute maximum ratings” may cause permanent damage
to the device. This is a stress rating only and functional operation of the device under these
conditions is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
c.
The product is factory calibrated at 3.3 V.
Table 6.
Electrical characteristics
Symbol
Parameter
Test condition
Min.
Typ.(1)
Max.
Unit
TSDr
Temperature sensor
output change vs.
temperature
-
-1
°C/digit
TODR
Temperature refresh rate
1
Hz
Top
Operating temperature
range
-30
+85
°C
1.
Typical specifications are not guaranteed.
Table 7.
Absolute maximum ratings(1)
1.
Supply voltage on any pin should never exceed 4.8 V.
Symbol
Ratings
Maximum value
Unit
AVdd
Supply voltage
-0.3 to 4.8
V
HAVdd
Supply voltage
-0.3 to 4.8
V
Vdd_IO_SPI Vdd IO SPI interface
-0.3 to HAVdd +0.1
V
Vin(UI)
Input voltage on:
(SCL, SDA, INT, DRDY)
-0.3 to AVdd +0.1
V
Vin(OIS)
Input voltage on:
(CS_OIS, SDI/SDO_OIS, SCL_OIS)
-0.3 to Vdd_IO_SPI
+0.1
V
TSTG
Storage temperature range
-40 to +125
°C
Sg
Acceleration g for 0.1 ms
10,000
g
ESD
Electrostatic discharge protection
2 (HBM)
kV
1.5 (CDM)
kV
200 (MM)
V



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