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DS90C032 데이터시트(PDF) 3 Page - National Semiconductor (TI) |
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DS90C032 데이터시트(HTML) 3 Page - National Semiconductor (TI) |
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3 / 10 page ![]() MICROCIRCUIT DATA SHEET MNDS90C032-X-RH REV 1B1 (Absolute Maximum Ratings) (Note 1) Supply Voltage (Vcc) -0.3 to +6V Input Voltage (RIN+, RIN-) -0.3 to (Vcc+0.3V) Enable Input Voltage (EN, EN*) -0.3 to (Vcc+0.3V) Output Voltage (ROUT) -0.3 to (Vcc+0.3V) Storage Temperature Range (Tstg) -65 C < Ta < + 150 C Lead Temperature 260 C Soldering 4 seconds Maximum Package Power Dissipation @ +25C (Note 2) 1830 mW 20 PIN LCC (E Pkg) 1400 mW 16 PIN CERPAK (W Pkg) TBD 16 PIN CERAMIC SOIC (WG Pkg) Thermal Resistance. (Theta JA) 82 C/W 20 PIN LCC (E Pkg) 148 C/W 16 PIN CERPAK (W Pkg) TBD 16 PIN CERAMIC SOIC (WG Pkg) Thermal Resistance. (Theta JC) 20 C/W 20 PIN LCC (E Pkg). 20 C/W 16 PIN CERPAK (W Pkg) TBD 16 PIN CERAMIC SOIC (WG Pkg) ESD Rating. 2000 Volts. Note 1: Absolute Maximum Ratings are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should be operated at these limits. The table of "Electrical Characteristics" provides conditions for actual device operation. Note 2: Derate (E Pkg) @ 12.2mW/C above +25C. Derate (W Pkg) @ 6.8 mW/C above +25C. Recommended Operating Conditions Operating Voltage (Vcc) 4.5V to 5.5V Operating Temperature Range (Ta) -55C to +125C Receiver Input Voltage GND to 2.4V 3 |
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