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ADRF5534BCPZN-R7 데이터시트(PDF) 1 Page - Analog Devices

부품명 ADRF5534BCPZN-R7
상세설명  3.1 GHz to 4.2 GHz, Receiver Front End
PDF  11 Pages
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Data Sheet
ADRF5534
3.1 GHz to 4.2 GHz, Receiver Front End
Rev. 0
DOCUMENT FEEDBACK
TECHNICAL SUPPORT
Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog
Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to
change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
FEATURES
Integrated RF front end
LNA and high-power silicon SPDT switch
On-chip bias and matching
Single-supply operation
Gain: 35.5 dB typical at 3.6 GHz
Gain flatness: 1.5 dB at 25°C across 400 MHz bandwidth
Low noise figure: 1.3 dB typical at 3.6 GHz
Low insertion loss: 0.8 dB typical at 3.6 GHz
High-power handling at TCASE = 105°C
Full lifetime
LTE average power (8 dB PAR): 37 dBm
Single event (<10 sec operation)
LTE average power (8 dB PAR): 39 dBm
High Input IP3: −4 dBm
Low-supply current
Receive operation: 120 mA typical at 5 V
Transmit operation: 15 mA typical at 5 V
Positive logic control
5 mm × 3 mm, 24-lead LFCSP package
APPLICATIONS
Wireless infrastructure
TDD massive multiple input and multiple output (MIMO) and
active antenna systems
TDD-based communication systems
FUNCTIONAL BLOCK DIAGRAM
Figure 1.
GENERAL DESCRIPTION
The ADRF5534 is an integrated RF, front-end multichip module
designed for time division duplex (TDD) applications. The device
operates from 3.1 GHz to 4.2 GHz. The ADRF5534 is configured
with an LNA and a high-power, silicon, SPDT switch.
In the receive operation at 3.6 GHz, the LNA offers a low noise
figure (NF) of 1.3 dB and a high gain of 35.5 dB with a third order
input intercept point (IIP3) of −4 dBm.
In the transmit operation, the switch provides a low insertion loss
of 0.8 dB and handles a long-term evolution (LTE) average power
of 37 dBm for a full lifetime operation (8 dB peak to average ratio
(PAR)) and 39 dBm for a single event (<10 sec) LNA protection
operation.
The device is featured in an RoHS compliant, compact, 5 mm × 3
mm, 24-lead LFCSP package.


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