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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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APT65GP60L2DF2 데이터시트(PDF) 1 Page - Advanced Power Technology |
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APT65GP60L2DF2 데이터시트(HTML) 1 Page - Advanced Power Technology |
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1 / 9 page  APT65GP60L2DF2 TYPICAL PERFORMANCE CURVES The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 100 kHz operation @ 400V, 54A • Low Gate Charge • 50 kHz operation @ 400V, 76A • Ultrafast Tail Current shutoff • SSOA rated MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com STATIC ELECTRICAL CHARACTERISTICS MIN TYP MAX 600 3 4.5 6 2.2 2.7 2.1 1250 5500 ±100 Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1250µA) Gate Threshold Voltage (VCE = VGE, IC = 2.5mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 65A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 65A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) Symbol BVCES VGE(TH) VCE(ON) ICES IGES UNIT Volts µA nA Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL APT65GP60L2DF2 600 ±20 ±30 100 96 250 250A@600V 833 -55 to 150 300 UNIT Volts Amps Watts °C Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current 7 @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 150°C Safe Switching Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. POWER MOS 7® IGBT G C E G C E TO-264 Max APT65GP60L2DF2 600V |
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