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TPCF8303 데이터시트(PDF) 1 Page - Toshiba Semiconductor

부품명 TPCF8303
상세설명  TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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TPCF8303
2003-07-16
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPCF8303
Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 6.0 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −20 V)
• Enhancement-model: Vth = −0.45 to −1.2 V
(VDS = −10 V, ID = −200 µA)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-20
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
-20
V
Gate-source voltage
VGSS
±8
V
DC
(Note 1)
ID
-3.0
Drain current
Pulse
(Note 1)
IDP
-12
A
Single-device operation
(Note 3a)
PD (1)
1.35
Drain power
dissipation
(t
= 5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
PD (2)
1.12
Single-device operation
(Note 3a)
PD (1)
0.53
Drain power
dissipation
(t
= 5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
PD (2)
0.33
W
Single pulse avalanche energy
(Note 4)
EAS
0.58
mJ
Avalanche current
IAR
-1.5
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR
0.11
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6),
please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3U1B
Weight: 0.011 g (typ.)
Circuit Configuration
Marking (Note 6)
8
1
5
4
F5C
1
2
3
4
8
7
6
5


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