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TPCF8303 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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TPCF8303 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page ![]() TPCF8303 2003-07-16 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8303 Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.) • Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) • Enhancement-model: Vth = −0.45 to −1.2 V (VDS = −10 V, ID = −200 µA) Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Drain-gate voltage (RGS = 20 kΩ) VDGR -20 V Gate-source voltage VGSS ±8 V DC (Note 1) ID -3.0 Drain current Pulse (Note 1) IDP -12 A Single-device operation (Note 3a) PD (1) 1.35 Drain power dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) PD (2) 1.12 Single-device operation (Note 3a) PD (1) 0.53 Drain power dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) PD (2) 0.33 W Single pulse avalanche energy (Note 4) EAS 0.58 mJ Avalanche current IAR -1.5 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.11 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3U1B Weight: 0.011 g (typ.) Circuit Configuration Marking (Note 6) 8 1 5 4 F5C 1 2 3 4 8 7 6 5 |
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