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IRKT92/06AS90 데이터시트(PDF) 3 Page - International Rectifier

부품명 IRKT92/06AS90
상세설명  ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
PDF  10 Pages
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRKT92/06AS90 데이터시트(HTML) 3 Page - International Rectifier

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IRK.71, .91 Series
3
Bulletin I27132 rev. H 10/02
www.irf.com
I
RRM
Max. peak reverse and
I
DRM
off-state leakage current
at VRRM, VDRM
2500 (1 min)
50 Hz, circuit to base, all terminals
3500 (1 sec)
shorted
dv/dt Max. critical rate of rise
T
J
= 125oC, linear to 0.67 V
DRM
,
of off-state voltage (5)
gate open circuit
T
J
Junction operating
temperature range
T
stg
Storage temp. range
- 40 to 125
R
thJC
Max. internal thermal
resistance, junction
0.165
0.135
Per module, DC operation
to case
R
thCS
Typical thermal resistance
case to heatsink
T
Mounting torque ± 10%
to heatsink
busbar
3
wt
Approximate weight
110 (4)
gr (oz)
Case style
TO-240AA
JEDEC
15
mA
T
J
= 125 oC, gate open circuit
Thermal and Mechanical Specifications
500
V/
µs
Parameters
IRK.71
IRK.91
Units
Conditions
- 40 to 125
0.1
5
Triggering
Blocking
(5) Available with dv/dt = 1000V/
µs, to complete code add S90 i.e. IRKT91/16AS90.
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
K/W
Nm
Mounting surface flat, smooth and greased
V
INS
RMS isolation voltage
V
P
GM
Max. peak gate power
12
12
P
G(AV)
Max. average gate power
3.0
3.0
I
GM
Max. peak gate current
3.0
3.0
A
-V
GM
Max. peak negative
gate voltage
V
GT
Max. gate voltage
4.0
TJ = - 40°C
required to trigger
2.5
TJ = 25°C
1.7
TJ = 125°C
I
GT
Max. gate current
270
TJ = - 40°C
required to trigger
150
mA
TJ = 25°C
80
TJ = 125°C
V
GD
Max. gate voltage
T
J
= 125oC,
that will not trigger
rated V
DRM applied
I
GD
Max. gate current
T
J
= 125oC,
that will not trigger
rated V
DRM
applied
Parameters
IRK.71
IRK.91
Units
Conditions
0.25
V
6mA
W
V
10
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
°C
Parameters
IRK.71
IRK.91
Units
Conditions
Sine half wave conduction
Rect. wave conduction
Devices
Units
180o
120o
90o
60o
30o
180o
120o
90o
60o
30o
IRK.71
0.06
0.07
0.09
0.12
0.18
0.04
0.08
0.10
0.13
0.18
IRK.91
0.04
0.05
0.06
0.08
0.12
0.03
0.05
0.06
0.08
0.12
°C/W
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)



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