DATA SHEET

SILICON TRANSISTOR

The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital

cordless phones (DECT, PHS, etc.).

FEATURES

•P–1 = 27 dBm TYP.

@f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8

•

4-Pin Mini Mold Package

EIAJ: SC-61

ORDERING INFORMATION

Part Number

Quantity

Packing Style

2SC5289-T1

3 Kpcs/Reel

Embossed tape 8 mm wide.

Pin 3 (Base), Pin 4 (Emitter) face

to perforation side of the tape.

Remark

To order evaluation samples, contact your nearby sales office.

(Unit sample quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

VCBO

9.0

V

Collector to Emitter Voltage

VCEO

6.0

V

Emitter to Base Voltage

VEBO

2.0

V

Collector Current

IC

300

mA

Total Power Dissipation

PT

200 (CW)

mW

1.2 (duty = 1/8)Note

W

3.0 (duty = 1/24)Note

W

Junction Temperature

Tj

150

˚C

Storage Temperature

Tstg

–65 to +150

˚C

Note Pulse period is 10 msec or less.

2SC5289

NPN SILICON EPITAXIAL TRANSISTOR

FOR L-BAND LOW-POWER AMPLIFIER

PACKAGE DRAWING

(Unit: mm)

Document No. PU10040EJ01V0DS (1st edition)

(Previous No. P10250EJ2V0DS00)

Date Published October 2001 CP(K)

Printed in Japan

2.8

+0.2

–0.3

1.5

+0.2

–0.1

5°

5°

5°

5°

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

 NEC Corporation 1995

 NEC Compound Semiconductor Devices 2001

The mark

shows major revised points.