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ILCT6 데이터시트(PDF) 2 Page - Vishay Siliconix |
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ILCT6 데이터시트(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page ![]() www.vishay.com 2 Document Number 83645 Rev. 1.4, 26-Oct-04 ILCT6/ MCT6 Vishay Semiconductors Output Coupler Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Parameter Test condition Symbol Value Unit Collector current IC 30 mA Collector-emitter breakdown voltage BVCEO 30 V Power dissipation Pdiss 150 mW Derate linearly from 25 °C 2mW/°C Parameter Test condition Symbol Value Unit Isolation test voltage VISO 5300 VRMS Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Total package dissipation Ptot 400 mW Derate linearly from 25 °C 5.33 mW/°C Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Lead soldering time at 260 °C 10 sec. Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 20 mA VF 1.25 1.50 V Reverse current VR = 3.0 V IR 0.1 10 µA Junction capacitance VF = 0 V Cj 25 pF Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter breakdown voltage IC = 10 µA, IE = 10 µABVCEO 30 65 V Emitter-collector breakdown voltage IC = 10 µA, IE = 10 µABVECO 7.0 10 V Collector-emitter leakage current VCE = 10 V ICEO 1.0 100 nA Collector-emitter capacitance VCE = 0 V CCE 8.0 pf |
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