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STP60NF06FP 데이터시트(PDF) 5 Page - STMicroelectronics |
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STP60NF06FP 데이터시트(HTML) 5 Page - STMicroelectronics |
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5 / 12 page ![]() STP60NF06FP Electrical characteristics 5/12 Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 30 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 120 A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 60A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 60A, VDD=25V di/dt = 100A/µs, Tj = 150°C (see Figure 13) 75 182 5 ns nC A |
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