CD214A-R11100 datasheet(1/5 Pages) BOURNS

부품명	CD214A-R11100

상세설명	CD214A-R150~R11600 Glass Passivated Rectifiers

PDF	5 Pages

Scroll/Zoom	100%

제조업체	BOURNS [Bourns Electronic Solutions]

홈페이지	http://www.bourns.com

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*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

CD214A-R150~R11600 Glass Passivated Rectifiers

Features

■

Lead free as standard

■

RoHS compliant*

■

Glass passivated chip

■

Low reverse leakage current

■

Low forward voltage drop

■

High current capability

General Information

Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)

Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)

Notes:

1 See Forward Derating Curve.

2 Measured @ 1.0 MHz and applied reverse voltage of 4.0 VDC.

3 Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 ˝ x 0.2 ˝ (5.0 mm x 5.0 mm) copper pad areas.

The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop

increasingly smaller electronic components. Bourns offers Glass Passivated Rectifiers for rectification applications, in compact chip

DO-214AC (SMA) size format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Glass

Passivated Rectifier Diodes offer a forward current of 1 A with a choice of repetitive peak reverse voltage of 50 V up to 1600 V.

Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration

minimizes roll away.

Parameter

Symbol

CD214A-R150~R11600

Unit

Operating Temperature Range

TJ

-65 to +175

°C

Storage Temperature Range

TSTG

-65 to +175

°C

Parameter

Symbol

CD214A-

Unit

R150

R1100

R1200

R1400

R1600

Maximum Repetitive

Peak Reverse Voltage

VRRM

50

100

200

400

600

V

Maximum RMS Voltage

VRMS

35

70

140

280

420

V

Maximum DC

Blocking Voltage

VDC

50

100

200

400

600

V

Max. Average Forward

Rectified Current1

I(AV)

1.0

A

DC Reverse Current @

Rated DC Blocking Voltage

(@TJ = 25 °C)

IR

5.0

µA

DC Reverse Current @

Rated DC Blocking Voltage

(@TJ = 125 °C)

IR

30

µA

DC Reverse Current @

Rated DC Blocking Voltage

(@TJ = 150 °C)

IR

50

µA

Typical Junction Capacitance2

CJ

12

pF

Maximum Instantaneous

Forward Voltage @ 1 A

VF

1.0

V

Typical Thermal Resistance3

RθJA

RθJL

75

27

°C/W

Peak forward surge current

8.3 ms single half sine-wave

superimposed on rated load

(JEDEC Method)

IFSM

30

A

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CD214A-R11100 데이터시트(PDF) 1 Page - Bourns Electronic Solutions

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