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M25PE80-VMN6TP 데이터시트(PDF) 9 Page - STMicroelectronics

부품명 M25PE80-VMN6TP
상세설명  8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout
PDF  61 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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M25PE80-VMN6TP 데이터시트(HTML) 9 Page - STMicroelectronics

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2.6
Write Protect (W) or Top Sector Lock (TSL)
●
The Write Protect function is available in the T9HX process only (see Important
note on page 6).
The Write Protect (W) input is used to freeze the size of the area of memory that is
protected against write, program and erase instructions (as specified by the values in
the BP2, BP1 and BP0 bits of the Status Register. See Section 6.4: Read Status
Register (RDSR) for a description of these bits).
●
The Top Sector Lock function is available in the T7Y process only (see Important
note on page 6).
The input signal sets the device in the Hardware Protected mode, when Top Sector
Lock (TSL) is connected to VSS, causing the top 256 pages (upper addresses) of the
memory to become read-only (protected from write, program and erase operations).
When Top Sector Lock (TSL) is connected to VCC, the top 256 pages of memory
behave like the other pages of memory.
2.7
VCC supply voltage
VCC is the supply voltage.
2.8
VSS ground
VSS is the reference for the VCC supply voltage.



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