 |
전자부품 데이터시트 검색엔진 |
|
|
전자부품 데이터시트 검색엔진 |
|
MB90F474LPF 데이터시트(PDF) 110 Page - fujitsu semiconductor |
|
|
|||||||||||||||||||||||||||||
MB90F474LPF 데이터시트(HTML) 110 Page - fujitsu semiconductor |
|
|
110 / 118 page  MB90470 Series 110 • Use of the X0/X1, X0A/X1A Pins • Sample use of external clock input 6. Flash Memory Program/Erase Characteristics Parameter Conditions Value Unit Remarks Min Typ Max Sector erase time TA = + 25 °C VCC = 3.3 V 1 15 s Excludes 00H programming prior erasure Chip erase time 7 s Excludes 00H programming prior erasure Word (16-bit) programming time 16 3600 µs Excludes system-level overhead Erase/Program cycle 1000 cycle Data hold time 100000 h X1 C2 C3 C4 C1 X0 X0A X1A Pull-up resistance 1 Pull-up resistance 2 Damping resistance 1 Damping resistance 2 Use with a crystal oscillator In normal use (VCC = 2 V or higher) Pull-up resistance 1, 2 Damping resistance 1, 2 C1 to C4 For all pins, consult regarding manufacturer of oscillator. (Sample operation using VCC = 2 V, f = 5 MHz or less) Pull-up resistance 1 = 5.1 kΩ Pull-up resistance 2 = 510 kΩ Damping resistance 1 = 0 Ω Damping resistance 2 = 39 kΩ C1 = C2 = 22 pF C3 = C4 = 30 pF X0 X1 OPEN MB90470 series |
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Korean ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
