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H5TC4G63CFR-RDI 데이터시트(PDF) 27 Page - Hynix Semiconductor |
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H5TC4G63CFR-RDI 데이터시트(HTML) 27 Page - Hynix Semiconductor |
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27 / 33 page ![]() Rev. 1.4/ Oct. 2015 27 Standard Speed Bins DDR3 SDRAM Standard Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin. DDR3-1066 Speed Bins For specific Notes see “Speed Bin Table Notes” on page 31. Speed Bin DDR3-1066 Unit Note CL - nRCD - nRP 7-7-7 Parameter Symbol min max Internal read command to first data tAA 13.125 20 ns ACT to internal read or write delay time tRCD 13.125 — ns PRE command period tRP 13.125 — ns ACT to ACT or REF command period tRC 50.625 — ns ACT to PRE command period tRAS 37.5 9 * tREFI ns CL = 5 CWL = 5 tCK(AVG) 3.0 3.3 ns 1, 2, 3, 4, 6, 12,13 CWL = 6 tCK(AVG) Reserved ns 4 CL = 6 CWL = 5 tCK(AVG) 2.5 3.3 ns 1, 2, 3, 6 CWL = 6 tCK(AVG) Reserved ns 1, 2, 3, 4 CL = 7 CWL = 5 tCK(AVG) Reserved ns 4 CWL = 6 tCK(AVG) 1.875 < 2.5 ns 1, 2, 3, 4 CL = 8 CWL = 5 tCK(AVG) Reserved ns 4 CWL = 6 tCK(AVG) 1.875 < 2.5 ns 1, 2, 3 Supported CL Settings 5, 6, 7, 8 nCK 13 Supported CWL Settings 5, 6 nCK |
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