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H5TC4G63CFR-RDJ 데이터시트(PDF) 28 Page - Hynix Semiconductor

부품명 H5TC4G63CFR-RDJ
상세설명  4Gb DDR3L SDRAM Lead-Free&Halogen-Free (RoHS Compliant)
PDF  33 Pages
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제조업체  HYNIX [Hynix Semiconductor]
홈페이지  http://www.skhynix.com/kor/main.do
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H5TC4G63CFR-RDJ 데이터시트(HTML) 28 Page - Hynix Semiconductor

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Rev. 1.4/ Oct. 2015
28
DDR3-1333 Speed Bins
For specific Notes see “Speed Bin Table Notes” on page 31.
Speed Bin
DDR3-1333
Unit
Note
CL - nRCD - nRP
9-9-9
Parameter
Symbol
min
max
Internal read
command to first data
tAA
13.5
(13.125)5,11
20
ns
ACT to internal read or
write delay time
tRCD
13.5
(13.125)5,11
—ns
PRE command period
tRP
13.5
(13.125)5,11
—ns
ACT to ACT or REF
command period
tRC
49.5
(49.125)5,11
—ns
ACT to PRE command
period
tRAS
36
9 * tREFI
ns
CL = 5
CWL = 5
tCK(AVG)
3.0
3.3
ns
1, 2, 3, 4,
7, 12,13
CWL = 6, 7 tCK(AVG)
Reserved
ns
4
CL = 6
CWL = 5
tCK(AVG)
2.5
3.3
ns
1, 2, 3, 7
CWL = 6
tCK(AVG)
Reserved
ns
1, 2, 3, 4, 7
CWL = 7
tCK(AVG)
Reserved
ns
4
CL = 7
CWL = 5
tCK(AVG)
Reserved
ns
4
CWL = 6
tCK(AVG)
1.875
< 2.5
ns
1, 2, 3, 4, 7
(Optional)5
CWL = 7
tCK(AVG)
Reserved
ns
1, 2, 3, 4
CL = 8
CWL = 5
tCK(AVG)
Reserved
ns
4
CWL = 6
tCK(AVG)
1.875
< 2.5
ns
1, 2, 3, 7
CWL = 7
tCK(AVG)
Reserved
ns
1, 2, 3, 4
CL = 9
CWL = 5, 6 tCK(AVG)
Reserved
ns
4
CWL = 7
tCK(AVG)
1.5
<1.875
ns
1, 2, 3, 4
CL = 10
CWL = 5, 6 tCK(AVG)
Reserved
ns
4
CWL = 7
tCK(AVG)
1.5
<1.875
ns
1, 2, 3
(Optional)
ns
5
Supported CL Settings
5, 6, 8, (7), 9, (10)
nCK
Supported CWL Settings
5, 6, 7
nCK



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