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ISCNL430W 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited

부품명 ISCNL430W
상세설명  isc N-Channel MOSFET Transistor
PDF  3 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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ISCNL430W 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISCNL430W Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCNL430W Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCNL430W Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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2
isc N-Channel MOSFET Transistor
ISCNL430W
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
600
--
--
V
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID= 0.25mA
2.0
--
4.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 15A
--
--
70
mΩ
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
--
--
±
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
--
--
1
uA
Ciss
Input Capacitance
VGS = 0V,
VDS = 100V,
f = 1.0MHz
-
3400
-
pF
Coss
Output Capacitance
-
115
-
Crss
Reverse Transfer Capacitance
-
2.7
-
Qg
Total Gate Charge
VDD = 480V,
ID = 15A,
VGS = 10V
-
58
-
nC
Qgs
Gate-Source Charge
-
15
-
Qgd
Gate-Drain Charge
-
15.6
-
td(on)
Turn-on Delay Time
VDD = 300V,
ID = 15A,
RG = 25Ω
VGS = 10V
-
53
-
ns
tr
Turn-on Rise Time
-
40
-
td(off)
Turn-off Delay Time
-
214
-
tf
Turn-off Fall Time
-
28
-
Drain - Source Body Diode Characteristics
VSD
Diode Forward Voltage
ISD= 25A; VGS= 0V
-
-
1.2
V
trr
Reverse Recovery Time
VDD = 50V,IF = 15A,
diF/dt = 100A /μs
-
280
-
ns
Qrr
Reverse Recovery Charge
-
4.3
-
uC



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