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W10NK60Z 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 W10NK60Z
상세설명  N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET
PDF  19 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

W10NK60Z 데이터시트(HTML) 5 Page - STMicroelectronics

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STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
2 Electrical characteristics
5/19
Table 8.
Source drain diode
(1) ISD ≤10A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Pulse width limited by safe operating area
(3) Limited only by maximum temperature allowed
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80%
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDMNote 2
Source-drain Current
Source-drain Current (pulsed)
10
36
A
A
VSDNote 4
Forward on Voltage
ISD=10A, VGS=0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=8A, di/dt = 100A/µs,
VDD=40 V, Tj=150°C
570
4.3
15
ns
µC
A



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