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BB145B 데이터시트(PDF) 2 Page - NXP Semiconductors

부품명 BB145B
상세설명  Low-voltage variable capacitance diode
PDF  7 Pages
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제조업체  NXP [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo NXP - NXP Semiconductors

BB145B 데이터시트(HTML) 2 Page - NXP Semiconductors

  BB145B Datasheet HTML 1Page - NXP Semiconductors BB145B Datasheet HTML 2Page - NXP Semiconductors BB145B Datasheet HTML 3Page - NXP Semiconductors BB145B Datasheet HTML 4Page - NXP Semiconductors BB145B Datasheet HTML 5Page - NXP Semiconductors BB145B Datasheet HTML 6Page - NXP Semiconductors BB145B Datasheet HTML 7Page - NXP Semiconductors  
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2004 Mar 29
2
NXP Semiconductors
Product specification
Low-voltage variable capacitance diode
BB145B
FEATURES
 Ultra small plastic SMD package
 C4: 2.75 pF; ratio: 2.4
 Low series resistance.
APPLICATIONS
 Voltage controlled oscillators (VCO).
DESCRIPTION
The BB145B is a planar technology variable capacitance
diode in a SOD523 (SC-79) package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
2
1
sym008
Fig.1
Simplified outline (SOD523; SC-79) and
symbol.
Marking code: Z.
Orientation of marking code as shown.
Cathode side indicated by a bar.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
Tj =25 C unless otherwise specified.
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BB145B
plastic surface mounted package; 2 leads
SOD523
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
6V
VRM
peak reverse voltage
in series with a 10 k
 resistor
8V
IF
continuous forward current
20
mA
Tstg
storage temperature
55
+150
C
Tj
operating junction temperature
55
+150
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IR
reverse current
VR = 6 V; see Fig.3
10
nA
VR =6V; Tj =85 C; see Fig.3
200
nA
rs
diode series resistance
f = 470 MHz; VR =1 V
0.6
Cd
diode capacitance
VR =1V; f=1MHz; seeFigs 2and4
6.4
7.2
pF
VR = 4 V; f = 1 MHz; see Figs 2 and 4
2.55
2.95
pF
capacitance ratio
f = 1 MHz
2.2
C
d1V

C
d4V

----------------



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