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SILICON POWER TRANSISTOR

2SC2690,2690A

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW/HIGH FREQUENCY POWER AMPLIFICATION

DATA SHEET

Document No. D17501EJ2V0DS00 (2nd edition)

(Previous No. TC-3586)

Date Published March 2005 NS CP(K)

Printed in Japan

1984

The mark

shows major revised points.

DESCRIPTION

These products are general purpose transistors designed for use

in audio and radio frequency power amplifiers.

FEATURES

• Suitable for use in driver stage of 50 to 100 W audio amplifiers

and output stage of TV vertical deflection circuit.

• High voltage and high fT

VCEO = 120 V (2SC2690) / 160 V (2SC2690A)

fT = 175 MHz (VCE = 5.0 V, IC = 0.2 A)

• Complementary to the 2SA1220 and 2SA1220A PNP transistors.

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SC2690

TO-126 (MP-5)

2SC2690-AZ

Note

TO-126 (MP-5)

2SC2690A

TO-126 (MP-5)

2SC2690A-AZ

Note

TO-126 (MP-5)

Note Pb-free (This product does not contain Pb in external electrode.)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

2SA2690

2SA2690A

Collector to Base Voltage

VCBO

120

160

V

Collector to Emitter Voltage

VCEO

120

160

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current (DC)

IC(DC)

1.2

A

Collector Current (pulse)

Note

IC(pulse)

2.5

A

Base Current (DC)

IB(DC)

0.3

A

Total Power Dissipation (TA = 25°C)

PT

1.2

W

Total Power Dissipation (TC = 25°C)

PT

20

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Note PW

≤ 10 ms, Duty Cycle ≤ 50%

PACKAGE DRAWING (Unit: mm)

8.5 MAX.

3.2 ±0.2

12 TYP.

2.3 TYP.

2.3 TYP.

1.2 TYP.

0.55

2.8 MAX.

0.8

+0.08

–0.05

+0.08

–0.05

12

3

1. Emitter

2. Collector

3. Base