The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

SILICON POWER TRANSISTOR

2SC4346,4346-Z

NPN SILICON TRIPLE DIFFUSED TRANSISTOR

FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING

DATA SHEET

Document No. D17082EJ3V0DS00 (3rd edition)

Date Published July 2006 NS CP(K)

Printed in Japan

2004

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SC4346

TO-251 (MP-3)

2SC4346-Z

TO-252 (MP-3Z)

DESCRIPTION

The 2SC4346 is a mold power transistor developed for

high-speed switching, high voltage switching, and is ideal

for use as a driver in devices such as switching regulators,

DC/DC converters, and high-frequency power amplifiers.

FEATURES

• Small package, but can control for high-current

• Low collector saturation voltage

VCE(sat) = 1.0 V MAX. (IC = 2.0 A)

• Ultra high-speed switching

tf = 0.3

μs MAX. (IC = 2.0 A)

• Base reverse bias safe operating area is wide

VCEX(SUS)1 = 450 V MIN. (IC = 2.0 A)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to Base Voltage

VCBO

500

V

Collector to Emitter Voltage

VCEO

400

V

Emitter to Base Voltage

VEBO

8.0

V

Collector Current (DC)

IC(DC)

5.0

A

Collector Current (pulse)

IC(pulse)

Note1

10

A

Base Current (DC)

IB(DC)

2.5

A

Total Power Dissipation

PT1 (TC = 25°C)

18

W

Total Power Dissipation

PT2 (TA = 25°C)

1.0

Note2, 2.0 Note3

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Notes 1. PW

≤ 10 ms, Duty Cycle ≤ 50%

2. Mounted on print board

3. Mounted on ceramic substrate of 7.5 cm

2 x 0.7 mm

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.