| 전자부품 데이터시트 검색엔진 |
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2SC4571 데이터시트(PDF) 4 Page - Renesas Technology Corp |
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2SC4571 데이터시트(HTML) 4 Page - Renesas Technology Corp |
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4 / 9 page ![]() ELECTRICAL CHARACTERISTICS (TA = +25 °C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 15 V, IE = 0 mA − − 100 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA − − 100 nA Collector Saturation Voltage VCE(sat) hFE = 10, IC = 5 mA − − 0.5 V DC Current Gain hFE Note 1 VCE = 5 V, IC = 5 mA 40 100 200 − RF Characteristics Gain Bandwidth Product fT VCE = 5 V, IC = 5 mA, f = 1.0 GHz − 5.0 – GHz Insertion Power Gain S21e2 VCE = 5 V, IC = 5 mA, f = 1.0 GHz 5.0 − − dB Output Capacitance Cob Note 2 VCB = 5 V, IE = 0 mA, f = 1.0 MHz − 0.9 1.2 pF Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank T75 T76 T77 Marking T75 T76 T77 hFE Value 40 to 80 60 to 120 100 to 200 Data Sheet PU10513EJ01V0DS 2 2SC4571 |
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