2PD602AS datasheet(4/7 Pages) NEXPERIA

4 / 7 page

1999 Apr 23

NXP Semiconductors

Product data sheet

NPN general purpose transistor

2PD602A

THERMAL CHARACTERISTICS

Note

Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = 60 V

−

IE = 0; VCB = 60 V; Tj = 150 °C

−

μA

IEBO

emitter cut-off current

IC = 0; VEB = 4 V

−

hFE

DC current gain

IC = 150 mA; VCE = 10 V; note 1

2PD602AQ

170

2PD602AR

120

240

2PD602AS

170

340

DC current gain

IC = 500 mA; VCE = 10 V; note 1

−

VCEsat

collector-emitter saturation

voltage

IC = 300 mA; IB = 30 mA; note 1

−

600

collector capacitance

IE = ie = 0; VCB = 10 V; f = 1 MHz

−

transition frequency

IC = 50 mA; VCE = 10 V;

f = 100 MHz; note 1

2PD602AQ

140

−

MHz

2PD602AR

160

−

MHz

2PD602AS

180

−

MHz

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