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2SC5186 데이터시트(PDF) 6 Page - Renesas Technology Corp |
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2SC5186 데이터시트(HTML) 6 Page - Renesas Technology Corp |
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6 / 9 page ![]() Data Sheet PU10213EJ01V0DS 4 2SC5186 3 2 1 0.5 1 2 3 5 7 10 20 30 Collector Current IC (mA) NOISE FIGURE vs. COLLECTOR CURRENT f = 2 GHz VCE = 1 V 2 V f = 2 GHz Collector Current IC (mA) INSERTION POWER GAIN vs. COLLECTOR CURRENT 5 10 0 0.7 1 7 3 220 10 530 VCE = 2 V 1 V Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.csd-nec.com/ |
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