2SD1695 datasheet(4/6 Pages) RENESAS

4 / 6 page

'DWD 6KHHW'(-9'6

2SD1695

(/(&75,&$/ &+$5$&7(5,67,&6 7D

°°°°&

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector to base voltage

VCBO

IC = 1.0 mA, IE = 0

273135

Collector to emitter voltage

VCEO

IC = 10 mA, RBE =

∞

Collector cutoff current

ICBO

VCB = 20 V, IE = 0

µA

DC current gain

hFE1*VCE = 2.0 V, IC = 0.5 A

1,000

DC current gain

hFE2*VCE = 2.0 V, IC = 1.0 A

2,000

30,000

Collector saturation voltage

VCE(sat)*IC = 1.0 A, IB = 1.0 mA

0.9

1.2

Base saturation voltage

VBE(sat)*IC = 1.0 A, IB = 1.0 mA

1.6

2.0

Turn-on time

ton

0.5

µs

Storage time

tstg

3.0

µs

Fall time

IC = 1.0 A, IB1 =

−IB2 = 5.0 mA

RL = 20

Ω, VCC ≅ 20 V

1.0

µs

3XOVH WHVW3: ≤

µV GXW\F\FOH ≤

K)( &/$66,),&$7,21

Marking

hFE2

2,000 to 5,000

4,000 to 10,000

8,000 to 30,000

7<3,&$/&+$5$&7(5,67,&6 7D

°°°°&

&DVH 7HPSHUDWXUH 7& °&

7HPSHUDWXUH 7 °&

1RWHV

PPDOXPLQXP

ERDUG IRUKHDWVLQN

1R LQVXODWLQJERDUG

6LOLFRQJUHDVH

FRDWLQJ

+RUL]RQWDOOHYHO

:LWKLQILQLWHKHDWVLQN

:LWKRXW KHDWVLQN

2SD1695 데이터시트(PDF) 4 Page - Renesas Technology Corp

2SD1695 데이터시트(HTML) 4 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6

데이터시트 다운로드

링크 URL