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1998

©

Document No. D14863EJ3V0DS00 (3rd edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SD560

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)

FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

DATA SHEET

2002

The 2SD560 is a mold power transistor developed for low-

frequency power amplifiers and low-speed switching. This transistor is

ideal for direct driving from the IC output of devices such as pulse

motor drivers and relay drivers, and PC terminals.

FEATURES

• C-to-E reverse diode inserted

• Low collector saturation voltage

ABSOLUTE MAXIMUM RATINGS (TA = 25

°°°°C)

Parameter

Symbol

Conditions

Ratings

Unit

Collector to base voltage

VCBO

150

V

Collector to emitter voltage

VCEO

100

V

Emitter to base voltage

VEBO

7.0

V

Collector current (DC)

IC(DC)

±5.0

A

Collector current (pulse)

IC(pulse)

PW

≤ 10 ms,

duty cycle

≤ 50%

±8.0

A

Base current (DC)

IB(DC)

0.5

A

TC = 25

°C

30

W

Total power dissipation

PT

TA = 25

°C

1.5

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

ORDERING INFORMATION

Ordering Name

Package

2SD560

TO-220AB

(TO-220AB)

INTERNAL EQUIVALENT CIRCUIT

1. Base

2. Collector

3. Emitter