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2SJ331 데이터시트(PDF) 8 Page - Renesas Technology Corp |
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2SJ331 데이터시트(HTML) 8 Page - Renesas Technology Corp |
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8 / 9 page ![]() Data Sheet D18444EJ2V0DS 6 2SJ331 PACKAGE DRAWING (Unit: mm) TO-3P (MP-88) 15.7 MAX. 3.2±0.2 2.2±0.2 5.45 TYP. 5.45 TYP. 1.0±0.2 4.7 MAX. 1.5 TYP. 2.8±0.1 0.6±0.1 1 2 3 4 φ 1.Gate 2.Drain 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. <R> |
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