PDTC123JM

50 V, 100 mA NPN resistor-equipped transistor;

R1 = 2.2 kΩ, R2 = 47 kΩ

1 April 2023

Product data sheet

1. General description

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-

Mounted Device (SMD) plastic package.

PNP complement: PDTA123JM

2. Features and benefits

• 100 mA output current capability

• Built-in bias resistors

• Simplifies circuit design

• Reduces component count

• Reduces pick and place costs

• AEC-Q101 qualified

3. Applications

• Digital application in industrial segments

• Cost-saving alternative for BC847 series in digital applications

• Controlling IC inputs

• Switching loads

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter

voltage

open base

-

-

50

V

IO

output current

-

-

100

mA

R1

bias resistor 1 (input)

[1]

1.54

2.2

2.86

kΩ

R2/R1

bias resistor ratio

[1]

17

21

26

[1] See "Section 11: Test information" for resistor calculation and test conditions.