PDTC143EM datasheet(1/12 Pages) NEXPERIA

부품명	PDTC143EM

상세설명	50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ

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PDTC143EM

50 V, 100 mA NPN resistor-equipped transistor;

R1 = 4.7 kΩ, R2 = 4.7 kΩ

1 April 2023

Product data sheet

1. General description

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-

Mounted Device (SMD) plastic package.

PNP complement: PDTA143EM

2. Features and benefits

• 100 mA output current capability

• Built-in bias resistors

• Simplifies circuit design

• Reduces component count

• Reduces pick and place costs

• AEC-Q101 qualified

3. Applications

• Digital application in automotive and industrial segments

• Cost-saving alternative for BC847 series in digital applications

• Controlling IC inputs

• Switching loads

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter

voltage

open base

-

50

V

IO

output current

-

100

mA

R1

bias resistor 1 (input)

[1]

3.3

4.7

6.1

kΩ

R2/R1

bias resistor ratio

[1]

0.8

1

1.2

[1] See "Section 11: Test information" for resistor calculation and test conditions.

유사한 부품 번호 - PDTC143EM

제조업체	부품명	데이터시트	상세설명
NXP Semiconductors	PDTC143EM	188Kb / 14P	NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 4.7 k廓 2004 Aug 05
Nexperia B.V. All right...	PDTC143EM	1Mb / 17P	PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k Rev. 8 - 8 December 2011
	PDTC143EM	1Mb / 18P	NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k Rev. 10 - 8 December 2011
	PDTC143EMB	960Kb / 12P	NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = 4.7 k廓

More results

유사한 설명 - PDTC143EM

제조업체	부품명	데이터시트	상세설명
Nexperia B.V. All right...	PDTC143ZU-Q	227Kb / 11P	50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ 22 February 2023
	PUMD15-Q	254Kb / 13P	50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ 8 March 2023
	PUMH18	237Kb / 11P	50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 10 kΩ 31 March 2023
	PDTC143ET-Q	228Kb / 12P	50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ 7 March 2022
	PDTC143ET	809Kb / 12P	50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ 1 April 2023
	PDTC143EU-Q	226Kb / 12P	50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ 7 March 2022
	PDTC143EU	772Kb / 11P	50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ 1 April 2023
	PUMH15-Q	236Kb / 11P	NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ 11 May 2022
	PDTD143ET-Q	247Kb / 13P	500 mA, 50 V NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ 5 January 2022
	PEMH13	223Kb / 11P	50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ 29 December 2022

More results

PDTC143EM 데이터시트(PDF) 1 Page - Nexperia B.V. All rights reserved

PDTC143EM 데이터시트(HTML) 1 Page - Nexperia B.V. All rights reserved

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