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STP80NF10 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STP80NF10
상세설명  N-channel 100V - 0.012OHM - 80A - TO-220 / D2PAK Low gate charge STRIPFET TM II Power MOSFET
PDF  14 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STP80NF10 데이터시트(HTML) 5 Page - STMicroelectronics

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STP80NF10 - STB80NF10
Electrical characteristics
5/14
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 50V, ID= 40A,
RG =4.7Ω, VGS=10V
(see Figure 14)
26
80
116
60
ns
ns
ns
ns
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
80
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
320
A
VSD
(2)
2.
Pulsed:pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD = 80A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=80A, VDD = 50V
di/dt = 100A/µs,Tj=150°C
106
450
8.5
ns
nC
A



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