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BCP55_BCX55_BC55PA

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Product data sheet

Rev. 8 — 24 October 2011

13 of 22

Nexperia

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

VCE =2V

(1) Tamb = 100 C

(2) Tamb =25 C

(3) Tamb = 55 C

Tamb =25 C

Fig 15. DC current gain as a function of collector

current; typical values

Fig 16. Collector current as a function of

collector-emitter voltage; typical values

VCE = 2 V

(1) Tamb = 55 C

(2) Tamb =25 C

(3) Tamb = 100 C

IC/IB =10

(1) Tamb = 100 C

(2) Tamb =25 C

(3) Tamb = 55 C

Fig 17. Base-emitter voltage as a function of collector

current; typical values

Fig 18. Collector-emitter saturation voltage as a

function of collector current; typical values

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100

200

300

hFE

0

IC (A)

10–4

10

1

10–3

10–1

10–2

(1)

(2)

(3)

VCE (V)

0

2.0

1.6

0.8

1.2

0.4

006aaa084

0.8

0.4

1.2

1.6

IC

(A)

0

25

20

15

10

5

IB (mA) = 50

45

40

35

30

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0.4

0.8

1.2

VBE

(V)

0.0

IC (mA)

10–1

104

103

1102

10

(1)

(2)

(3)

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IC (mA)

10–1

104

103

1102

10

10–1

1

VCEsat

(V)

10–2

(1)

(2)

(3)