BSP50 datasheet(1/10 Pages) NEXPERIA

부품명	BSP50

상세설명	NPN Darlington transistor

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BSP50

NPN Darlington transistor

6 June 2018

Product data sheet

1. General description

NPN Darlington transistor in an SOT223 plastic package.

PNP complement: BSP60

2. Features and benefits

• High current of 1 A

• Low voltage of 45 V

• Integrated diode and resistor

• AEC-Q101 qualified

3. Applications

• Industrial high gain amplification

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCBO

collector-base voltage open emitter

-

60

V

VCES

collector-emitter

voltage

base short-circuited to emitter

-

45

V

IC

collector current

-

1

A

ICM

peak collector current

-

2

A

hFE

DC current gain

VCE = 10 V; IC = 150 mA

[1]

1000

-

[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

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NXP Semiconductors	BSP50	47Kb / 8P	NPN Darlington transistors 1999 Apr 23
Siemens Semiconductor G...	BSP50	152Kb / 5P	NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)
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Transys Electronics	MPSA13	124Kb / 1P	NPN DARLINGTON TRANSISTOR
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Fairchild Semiconductor	2N5306	23Kb / 2P	NPN Darlington Transistor
Fairchild Semiconductor	MPSA13	605Kb / 13P	NPN Darlington Transistor
Rohm	2SD2399	370Kb / 5P	Transistor,NPN,Darlington
Fairchild Semiconductor	2N7052	310Kb / 8P	NPN Darlington Transistor
Fairchild Semiconductor	MPSA14	651Kb / 14P	NPN Darlington Transistor
Solid States Devices, I...	SFT10000-3	143Kb / 2P	NPN DARLINGTON TRANSISTOR
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