Nexperia

BSP52

NPN Darlington transistor

10. Characteristics

Table 7. Characteristics

Tj = 25 °C unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V(BR)CBO

collector-base

breakdown voltage

IC = 100 µA; IE = 0 A

90

-

-

V

V(BR)CES

collector-emitter

breakdown voltage

IC = 2 mA; VBE = 0 V

80

-

-

V

V(BR)EBO

emitter-base

breakdown voltage

IC = 0 A; IE = 100 µA

5

-

-

V

ICES

collector-emitter cut-off

current

VBE = 0 V; VCE = 80 V

-

-

50

nA

IEBO

emitter-base cut-off

current

VEB = 4 V; IC = 0 A

-

-

50

nA

VCE = 10 V; IC = 150 mA

[1]

1000

-

-

hFE

DC current gain

VCE = 10 V; IC = 500 mA

[1]

2000

-

-

-

-

1.3

V

VCEsat

collector-emitter

saturation voltage

IC = 500 mA; IB = 0.5 mA; Tj = 150 °C

-

-

1.3

V

VBEsat

base-emitter saturation

voltage

IC = 500 mA; IB = 0.5 mA

-

-

1.9

V

ton

turn-on time

-

500

-

ns

toff

turn-off time

IC = 500 mA; IBon = 0.5 mA;

IBoff = -0.5 mA

-

1300

-

ns

fT

transition frequency

VCE = 5 V; IC = 500 mA; f = 100 MHz

-

200

-

MHz

[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

mgd838

0

5000

1000

2000

3000

4000

10- 1

1

IC (mA)

hFE

10

102

103

VCE = 10 V

Fig. 1. DC current gain; typical values

BSP52

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Product data sheet

23 February 2018

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