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36NM60N 데이터시트(PDF) 1 Page - STMicroelectronics |
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36NM60N 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() This is information on a product in full production. June 2015 DocID16099 Rev 5 1/15 STB36NM60N Automotive-grade N-channel 600 V, 0.093 Ω, 29 A, MDmesh™ II Power MOSFET in a D²PAK package Datasheet — production data Figure 1. Internal schematic diagram Features • Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. D PAK 2 1 3 TAB Order code VDS @ TJmax RDS(on) max. ID PTOT STB36NM60N 650 V 0.105 Ω 29 A 210 W Table 1. Device summary Order code Marking Packages Packaging STB36NM60N 36NM60N D2PAK Tape and reel www.st.com |
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