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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STM32U535NET6QTR 데이터시트(PDF) 149 Page - STMicroelectronics |
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STM32U535NET6QTR 데이터시트(HTML) 149 Page - STMicroelectronics |
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149 / 278 page  Table 47. Static power consumption of flash banks, when supplied by LDO/SMPS Symbol Parameter Typ Max(1) Unit 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C IDD (Flash_Bank1) (2) Flash bank 1 static consumption in normal mode (PD1 = 1 versus PD1 = 0) 45.0 45.0 50.0 50.0 100.0 60.0 100.0 100.0 100.0 150.0 µA IDD (Flash_Bank2) (2) Flash bank 2 static consumption in normal mode (PD2 = 1 versus PD2 = 0) 45.0 45.0 50.0 50.0 100.0 60.0 100.0 100.0 100.0 150.0 IDD (Flash_Bank_LPM) (3) One flash bank additional static consumption in normal mode versus low-power mode (LPM = 0 versus LPM = 1) 25.0 25.0 25.0 25.0 50.0 40.0 40.0 40.0 40.0 70.0 1. Evaluated by characterization. Not tested in production. 2. When one bank is in power-down, this consumption is saved. When the flash memory is in power down in Sleep mode (SLEEP_PD =1 ), Bank 1 and Bank 2 are in power down. 3. If no bank is in power-down, the flash memory additional static consumption in normal mode versus low-power mode is 2 x IDD(Flash_Bank_LPM). Table 48. Current consumption in Stop 0 mode on LDO Symbol Parameter Conditions Typ Max(1) Unit VDD (V) 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C IDD(Stop 0) Supply current in Stop 0 mode, regulator in Range 4, RTC disabled, 8-Kbyte SRAM2 + ICACHE retained 1.8 74.5 165 435 845 1600 230 500 1400 2600 4800 µA 2.4 74.5 165 435 845 1600 230 500 1400 2600 4800 3.0 74.5 165 440 845 1600 230 500 1400 2600 4800 3.3 75.0 165 440 850 1600 230 500 1400 2600 4800 3.6 76.0 170 440 850 1650 230 510 1400 2600 5000 Supply current in Stop 0 mode, regulator in Range 4, RTC disabled, All SRAMs retained 1.8 79.0 175 465 905 1750 240 530 1400 2800 5300 2.4 79.0 175 465 910 1750 240 530 1400 2800 5300 3.0 79.0 175 465 910 1750 240 530 1400 2800 5300 3.3 79.5 175 465 910 1750 240 530 1400 2800 5300 3.6 80.5 180 470 915 1750 250 540 1500 2800 5300 |
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