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STM32U535NET6QTR 데이터시트(PDF) 252 Page - STMicroelectronics

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상세설명  Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, up to 512 KB flash memory, 274 KB SRAM
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Electrical characteristics
STM32U535xx
252/278
DS14217 Rev 1
5.3.37
USB_FS characteristics
5.3.38
JTAG/SWD interface characteristics
Unless otherwise specified, the parameters given in the tables below are derived from tests
performed under the ambient temperature, fHCLKx frequency and VDD supply voltage
conditions summarized in Table 32, with the following configuration:
Output speed set to OSPEEDRy[1:0] = 10
Capacitive load CL = 30 pF
Measurement points done at 0.5 × VDD level
Refer to Section 5.3.14: I/O port characteristics for more details on the input/output
characteristics.
Table 129. USB_FS characteristics
Symbol
Parameter
Conditions
Min
Typ
Max Unit
VDDUSB
USB transceiver operating supply voltage
-
3.0(1)
-3.6
V
RPUI
Embedded USB_DP pullup value during idle
-
900
-
1575
RPUR
Embedded USB_DP pullup value during reception
-
1425
-
3090
ZDRV
Output driver impedance(2)
High and low driver
28
36
44
1. USB functionality is ensured down to 2.7 V, but some USB electrical characteristics are degraded in 2.7 to 3.0 V range.
2. No external termination series resistors are required on USB_DP (D+) and USB_DM (D-). The matching impedance is
already included in the embedded driver.
Table 130. JTAG characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
FTCK
TCK clock frequency
2.7 V ≤ VDD ≤ 3.6 V
-
-
38
MHz
1.71 V ≤ VDD ≤ 3.6 V
-
-
26
tisu(TMS)
TMS input setup time
-
1
-
-
ns
tih(TMS)
TMS input hold time
-
3
-
-
tisu(TDI)
TDI input setup time
-
2
-
-
tih(TDI)
TDI input hold time
-
1
-
-
tov(TDO)
TDO output valid time
2.7 V ≤ VDD ≤ 3.6 V
-
9
13
ns
1.71 V ≤ VDD ≤ 3.6 V
-
9
19
toh(TDO)
TDO output hold time
-
7
-
-
1. Evaluated by characterization. Not tested in production.
Table 131. SWD characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
FSWCLK
SWCLK clock frequency
2.7 V ≤ VDD ≤ 3.6 V
-
-
66.5
MHz
1.71 V ≤ VDD ≤ 3.6 V
-
-
43



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