Features

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High voltage rail up to 1700 V

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Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V

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dV/dt transient immunity ±100 V/ns

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Input-output propagation delay: 45 ns

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Separate sink and source option for easy gate driving configuration

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UVLO function optimized for GaN

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Gate driving voltage up to 15 V

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3.3 V, 5 V TTL/CMOS inputs with hysteresis

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Temperature shut-down protection

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Standby function

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Narrow body SO-8 package

Application

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Motor driver for home appliances, factory automation, industrial drives and

fans.

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600/1200 V inverters

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Wireless chargers

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UPS

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Power supply units

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DC-DC converters

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Power Factor Correction

Description

The STGAP2GSN is a single gate driver which provides isolation between the gate

driving channel and the low voltage control and interface circuitry.

The gate driver is characterized by 2 A source and 3 A sink capability and rail-to-rail

outputs, making the device also suitable for mid and high power applications such as

power conversion and motor driver inverters in industrial applications.

The device allows to independently optimize turn-on and turn-off by using dedicated

gate resistors.

The device integrates protection functions including thermal shutdown ans UVLO

with optimized level for Enhancement-mode GaN FETs, which enables easy design

high efficiency and reliable systems. Dual input pins allow the selection of signal

polarity control and implementation of HW interlocking protection to avoid cross-

conduction in case of controller malfunction.

The input to output propagation delay results contained within 45 ns, providing high

PWM control accuracy.

A standby mode is available to reduce idle power consumption.

Product status link

STGAP2GSN

Product label

Isolated 3 A single gate driver for Enhancement mode GaN FETs

STGAP2GSN

Datasheet

DS14151 - Rev 1 - December 2022

For further information contact your local STMicroelectronics sales office.

www.st.com