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ISO808ATR 데이터시트(PDF) 21 Page - STMicroelectronics

부품명 ISO808ATR
상세설명  Galvanic isolated octal high-side power solid state relay with SPI interface for high inductive loads
PDF  38 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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ISO808ATR 데이터시트(HTML) 21 Page - STMicroelectronics

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Figure 18. Short-circuit (with OVT) during ON state
Figure 19. Switching on short-circuit (with OVT)
7.2
Thermal protection
The device is protected against overheating due to overload conditions. During driving period, if the output is
overloaded, the device suffers two different thermal stresses, the first one related to the junction, and the second
related to the case.
The two faults have different trigger thresholds: the junction protection threshold (TJSD) is higher than that of the
case protection (TCSD). Generally, the first protection that is activated in thermal stress conditions is the junction
thermal shutdown. The output is turned off when the temperature is higher than the related threshold and turned
back on when it falls below the reset threshold (TJR). This behavior continues while the fault on the output is
present.
If the thermal protection is active and the temperature of the package increases over the fixed case protection
threshold, the case protection is activated, and the output is switched off and back on when the junction
temperature of each channel in fault and case temperature are below the respective reset thresholds.
Figure 20. Thermal protection flowchart
ISO808A, ISO808A-1
Thermal protection
DS14170 - Rev 1
page 21/38



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