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AT45DB161E 데이터시트(PDF) 10 Page - Renesas Technology Corp

부품명 AT45DB161E
상세설명  16-Mbit DataFlash (with Extra 512-kbits) 2.3 V or 2.5 V Minimum SPI Serial Flash Memory
PDF  77 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT45DB161E 데이터시트(HTML) 10 Page - Renesas Technology Corp

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DS-AT45DB161E-8782 Rev. P
Page 10
1/27/23
© 2023 Renesas Electronics
AT45DB161E Datasheet
4.
Memory Array
To provide optimal flexibility, the AT45DB161E memory array is divided into three levels of granularity comprising
of sectors, blocks, and pages. Figure 3 illustrates the breakdown of each level and details the number of pages
per sector and block. Program operations to the DataFlash can be done at the full page level or at the byte level (a
variable number of bytes). The erase operations can be performed at the chip, sector, block, or page level.
Figure 3. Memory Architecture Diagram
Sector 0a = 8 pages
4,096/4,224 bytes
Sector 0b = 248 pages
126,976/130,944 bytes
Block = 4,096/4,224 bytes
8 Pages
Sector 0a
Page = 512/528 bytes
Page 0
Page 1
Page 6
Page 7
Page 8
Page 9
Page 4,094
Page 4,095
Page 14
Page 15
Page 16
Page 17
Page 18
Sector Architecture
Block Architecture
Page Architecture
Block 0
Block 1
Block 30
Block 31
Block 32
Block 33
Block 510
Block 511
Block 62
Block 63
Block 64
Block 65
Sector 15 = 256 pages
131,072/135,168 bytes
Block 2
Sector 1 = 256 pages
131,072 /135,168 bytes
Sector 14 = 256 pages
131,072/135,168 bytes
Sector 2 = 256 pages
131,072/135,168 bytes



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