BAW101S datasheet(4/10 Pages) PHILIPS

4 / 10 page

2003 May 13

Philips Semiconductors

Product speciﬁcation

High voltage double diode

BAW101S

THERMAL CHARACTERISTICS

Notes

1. One or more diodes loaded.

2. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

note 1

255

K/W

Rth j-a

thermal resistance from junction to ambient

note 2

357

K/W

GRAPHICAL DATA

handbook, halfpage

(1)

(2)

100

Tamb (°C)

(mA)

200

300

100

200

150

MLE057

Device mounted on an FR4 printed-circuit board.

Cathode-lead mounting pad = 1 cm2.

Fig.2

Maximum permissible continuous forward

current as a function of ambient

temperature.

(1) Single diode loaded.

(2) Double diode loaded.

handbook, halfpage

600

(mA)

200

400

MBG384

VF (V)

(1)

(3)

(2)

(1) Tj = 150 °C; typical values.

(2) Tj =25 °C; typical values.

(3) Tj =25 °C; maximum values.

Fig.3

Forward current as a function of forward

voltage.

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