PBLS6002D_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 7 September 2009

3 of 16

NXP Semiconductors

PBLS6002D

60 V PNP BISS loadswitch

5.

Limiting values

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.

[3]

Device mounted on a ceramic PCB, Al2O3, standard footprint.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

TR1; PNP low VCEsat transistor

VCBO

collector-base voltage

open emitter

-

−80

V

VCEO

collector-emitter voltage

open base

-

−60

V

VEBO

emitter-base voltage

open collector

-

−5V

IC

collector current (DC)

[1] -

−700

mA

[2] -

−850

mA

[3] -

−1A

ICM

peak collector current

single pulse;

tp ≤ 1ms

-

−2A

IB

base current (DC)

-

−300

mA

IBM

peak base current

single pulse;

tp ≤ 1ms

-

−1A

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -

250

mW

[2] -

350

mW

[3] -

400

mW

TR2; NPN resistor-equipped transistor

VCBO

collector-base voltage

open emitter

-

50

V

VCEO

collector-emitter voltage

open base

-

50

V

VEBO

emitter-base voltage

open collector

-

10

V

VI

input voltage

positive

-

+30

V

negative

-

−10

V

IO

output current (DC)

-

100

mA

ICM

peak collector current

-

100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -

200

mW

[2] -

200

mW

[3] -

200

mW

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -

400

mW

[2] -

530

mW

[3] -

600

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C