Voltage Variable RF Attenuator

1MHz to 3000MHz

© 2018 Renesas Electronics Corporation

2

May 7, 2021

F2255

Datasheet

ABSOLUTE MAXIMUM RATINGS

Parameter / Condition

Symbol

Min

Max

Units

VDD to GND

VDD

-0.3

5.5

V

VMODE to GND

VMODE

-0.3

Minimum ( VDD, 3.9 )

V

VCTRL to GND

VDD = 0V to 5.25V

VCTRL

-0.3

Minimum ( VDD, 4.0 )

V

RF1, RF2 to GND

VRF

-0.3

0.3

V

RF1 or RF2 Input Power applied for 24 hours maximum

(

VDD applied @ 2GHz and Tc=+85°C)

PMAX24

30

dBm

RF1 or RF2 Continuous Operating Power

PMAX_OP

See Figure 1

dBm

Maximum Junction Temperature

TJMAX

+150

°C

Storage Temperature Range

TST

-65

+150

°C

Lead Temperature (soldering, 10s)

TLEAD

+260

°C

ESD Voltage– HBM (Per ESD STM5.1-2007)

VESDHBM

Class 2

ESD Voltage – CDM (Per ESD STM5.3.1-2009)

VESDCDM

Class C3

FIGURE 1: MAXIMUM OPERATING RF INPUT POWERS VS. RF FREQUENCY

Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at

these or any other conditions above those indicated in the operational section of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

PACKAGE THERMAL AND MOISTURE CHARACTERISTICS

ΘJA (Junction – Ambient)

80.6°C/W

ΘJC (Junction – Case) The Case is defined as the exposed paddle

5.1°C/W

Moisture Sensitivity Rating (Per J-STD-020)

MSL 1