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BA314 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BA314 데이터시트(HTML) 3 Page - NXP Semiconductors |
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3 / 5 page ![]() 1996 Mar 21 3 Philips Semiconductors Product specification Low-voltage stabistor BA314 ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage see Fig.2 IF = 0.1 mA 610 − 690 mV IF = 1 mA 680 − 760 mV IF = 5 mA 730 − 810 mV IF = 10 mA 750 − 830 mV IF = 100 mA 850 − 940 mV IR reverse current VR =4V −− 5 µA rdif differential resistance IF = 1 mA; f = 1 kHz − 30 −Ω IF = 10 mA; f = 1 kHz − 3.5 6 Ω SF temperature coefficient IF =1mA −−1.8 − mV/K Cd diode capacitance VR =0V; f=1MHz −− 140 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 8 mm from the body 300 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm 380 K/W |
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