| 전자부품 데이터시트 검색엔진 |
|
BA891 데이터시트(PDF) 3 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
BA891 데이터시트(HTML) 3 Page - NXP Semiconductors |
|
3 / 8 page ![]() 1998 Aug 31 3 Philips Semiconductors Product specification Band-switching diode BA891 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 85 K/W GRAPHICAL DATA Fig.2 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 010 20 30 1 0 0.8 0.6 0.4 0.2 MGL479 VR (V) Cd (pF) Fig.3 Diode forward resistance as a function of forward current; typical values. f = 100 MHz; Tj =25 °C. handbook, halfpage 10 1 10−1 MGL478 10−1 110 IF (mA) rD ( Ω) |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |