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ICS841S012DI 데이터시트(PDF) 6 Page - Renesas Technology Corp |
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ICS841S012DI 데이터시트(HTML) 6 Page - Renesas Technology Corp |
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6 / 24 page ![]() 841S012DI Datasheet ©2016 Integrated Device Technology, Inc January 4, 2016 6 ABSOLUTE MAXIMUM RATINGS Supply Voltage, V DD 4.6V Inputs, V I -0.5V to V DD + 0.5 V Outputs, V O -0.5V to V DDO + 0.5V Package Thermal Impedance, θ JA 31.4°C/W (0 mps) Storage Temperature, T STG -65°C to 150°C NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for ex- tended periods may affect product reliability. TABLE 4A. POWER SUPPLY DC CHARACTERISTICS, V DD = V DD_REFOUT = V DDOB = V DDOC = 3.3V±5%, TA = -40°C TO 85°C TABLE 4B. LVCMOS/LVTTL DC CHARACTERISTICS, V DD = V DD_REFOUT = V DDOB = V DDOC = 3.3V±5%, TA = -40°C TO 85°C Symbol Parameter Test Conditions Minimum Typical Maximum Units V DD Core Supply Voltage 3.135 3.3 3.465 V V DDA Analog Supply Voltage V DD – 0.20 3.3 V DD V V DDOB, V DDOC Output Supply Voltage 3.135 3.3 3.465 V I DD Power Supply Current HCSL Loaded, LVCMOS No Load 300 mA I DDA Analog Supply Current 20 mA Symbol Parameter Test Conditions Minimum Typical Maximum Units V IH Input High Voltage 2 V DD + 0.3 V V IL Input Low Voltage -0.3 0.8 V I IH Input High Current QA_OE, QBC_OE, nMR, SSC0, SSC1, V DD = V IN = 3.465V 10 µA F_SELA[0:1], F_ SELB[0:2]. F_SELC[0:2], REF_OE, BYPASS, REF_IN, REF_SEL V DD = V IN = 3.465V 150 µA I IL Input Low Current QA_OE, QBC_OE, nMR, SSC0, SSC1, V DD = 3.465V, V IN = 0V -150 µA F_SELA[0:1], F_ SELB[0:2]. F_SELC[0:2], REF_OE, BYPASS, REF_IN, REF_SEL V DD = 3.465V, V IN = 0V -10 µA V OH Output High Voltage V DDOB, V DDOC = I OH = -2mA 2.6 V V OL Output Low Voltage V DDOB, V DDOC = I OL = 2mA 0.5 V TABLE 5. CRYSTAL CHARACTERISTICS Parameter Test Conditions Minimum Typical Maximum Units Mode of Oscillation Fundamental Frequency 25 MHz Equivalent Series Resistance (ESR) 50 Ω Shunt Capacitance 7pF Drive Level 100 µW NOTE: Characterized using an 18pF parallel resonant crystal. |
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